| PART |
Description |
Maker |
| MCCD2004S |
350 mW High Voltage Switching Diode 240 Volts
|
Micro Commercial Components
|
| MMBD3004S |
350 mW High Voltage Switching Diode 240 Volts
|
http://
|
| 255-993-64-38 255-930-64-38 255-501-64-38-14 255-5 |
Durable to shock and vibration
|
Marl International Limi...
|
| G160 |
SOLAR PANEL 160 W EFFICIENT, RELIABLE, AND DURABLE
|
American Accurate Components, Inc.
|
| DMB-4773 DMB-4770 DMB-4771 DMB-4772 |
Durable UL94V- 0 rated ABS/PC blend plastic housing
|
Bud Industries, Inc.
|
| LT3437EFE LT3437IFE LT3437EFEPBF LT3437EDDTR |
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100μA Quiescent Current
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 125°C 0.9 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO16
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 125°C 0.9 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO10
|
Linear Technology, Corp.
|
| APT5024AVR |
POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| 0010894222 10-89-4222 70216-0244 A-70216-0244 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240") Mating Pin Length, 0.38渭m (15渭") Gold (Au) Select
2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240) Mating Pin Length, 0.38μm (15μ) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010894226 10-89-4226 70216-0400 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240") Mating Pin Length, 0.76渭m (30渭") Gold (Au) Select
2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle,22 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010894142 10-89-4142 A-70216-0240 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle, 14 Circuits, 6.10mm (.240") Mating Pin Length, 0.38渭m (15渭") Gold (Au) Selec
2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle, 14 Circuits, 6.10mm (.240) Mating Pin Length, 0.38μm (15μ) Gold (Au) Selective Plating
|
Molex Electronics Ltd.
|
